Springer
Gas Source Molecular Beam Epitaxy: Growth and Properties of Phosphorus Containing III-V Heterostructures
Product Code:
9783642781292
ISBN13:
9783642781292
Condition:
New
$118.37
Gas Source Molecular Beam Epitaxy: Growth and Properties of Phosphorus Containing III-V Heterostructures
$118.37
Today nobody can do without modern semiconductor technology and their application in micro- and optoelectronics. Here, the technique that is able to grow thinnest and best definded layers is described by the "pope" of the method in whose laboratory it was developed. Whoever is involved in research and development or advanced studies in this fascinating field will welcome the unique volume with great interest.
| Author: Morton B. Panish |
| Publisher: Springer |
| Publication Date: Dec 30, 2011 |
| Number of Pages: 428 pages |
| Binding: Paperback or Softback |
| ISBN-10: 3642781292 |
| ISBN-13: 9783642781292 |
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