LAP Lambert Academic Publishing
Gan Hemt Modeling and Design for MM and Sub-MM Wave Power Amplifiers
Product Code:
9783847325673
ISBN13:
9783847325673
Condition:
New
$85.32
$83.05
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Gan Hemt Modeling and Design for MM and Sub-MM Wave Power Amplifiers
$85.32
$83.05
Sale 3%
This work initially compares GaN high electron mobility transistors (HEMTs) based on the established Ga-face technology and the emerging N-face technology. An investigation is then carried out on the short channel effects in ultra-scaled GaN and InP HEMTs. The dielectric effects of the passivation layer in millimeter-wave, high-power GaN HEMTs are also investigated by focusing on the effective gate length, the gate fringing capacitance, and the drain-to-gate feedback capacitance. Lastly, efficient Full Band Monte Carlo particle-based device simulations of the large-signal performance of millimeter-wave transistor power amplifiers with high-Q matching networks are reported for the first time. In particular, a Cellular Monte Carlo code is self-consistently coupled with a Harmonic Balance frequency domain circuit solver. This book provides device engineers with an insight about the link between the nano-scale carrier dynamics and the device performance. It also introduces an efficient tool for the device early-stage design for RF power amplifiers.
| Author: Diego Guerra |
| Publisher: LAP Lambert Academic Publishing |
| Publication Date: Feb 06, 2012 |
| Number of Pages: 224 pages |
| Binding: Paperback or Softback |
| ISBN-10: 3847325671 |
| ISBN-13: 9783847325673 |
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