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Springer
Research on the Radiation Effects and Compact Model of SiGe HBT
Product Code:
9789811046117
ISBN13:
9789811046117
Condition:
New
$117.02
Research on the Radiation Effects and Compact Model of SiGe HBT
$117.02
This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.
| Author: Yabin Sun |
| Publisher: Springer |
| Publication Date: Nov 02, 2017 |
| Number of Pages: 168 pages |
| Language: English |
| Binding: Hardcover |
| ISBN-10: 9811046115 |
| ISBN-13: 9789811046117 |
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