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Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect

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Product Code: 9789811061646
ISBN13: 9789811061646
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$117.02

Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect

$117.02
 
This thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material. Pursuing a systematic approach to resolve the remaining critical issues in the CMP, it first investigates the tribocorrosion properties and the material removal mechanisms of copper (Cu) and Ru in KIO4-based slurry. The thesis subsequently studies Cu/Ru galvanic corrosion from a new micro and in-situ perspective, and on this basis, seeks ways to mitigate corrosion using different slurry additives. The findings presented here constitute a significant advance in fundamental and technical investigations into the CMP, while also laying the groundwork for future research.


Author: Jie Cheng
Publisher: Springer
Publication Date: Sep 18, 2017
Number of Pages: 137 pages
Language: English
Binding: Hardcover
ISBN-10: 9811061645
ISBN-13: 9789811061646
 

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